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Structures Grown by Molecular Beam Epitaxy
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1973
Year
SemiconductorsMaterials ScienceMaterials EngineeringElectrical EngineeringEngineeringGaas-gaalas SuperlatticeIi-vi SemiconductorNanotechnologyNanoelectronicsApplied PhysicsMolecular Beam EpitaxyEpitaxial GrowthOptoelectronicsCompound SemiconductorSemiconductor Nanostructures
The process of molecular beam epitaxy is described, and its application to compound semiconductors is discussed. Growths and properties of GaAs and GaAs-GaAlAs superlattice are presented.