Molecular-beam epitaxy (MBE) of In1−<i>x</i>Ga<i>x</i>As and GaSb1−<i>y</i>As<i>y</i>

Abstract

Films of In1−xGaxAs and GaSb1−yAsy over the entire composition ranges have been grown on (100) GaAs, InAs, and GaSb substrates by MBE. In situ observations by high-energy electron diffraction have revealed a variety of surface reconstructions and correlated the growth process with the lattice mismatch. The compositions are governed by the relative rates of In and Ga in In1−xGaxAs, but primarily by that of Sb in GaSb1−yAsy because of its dominant incorporation over As. In these alloys, Sn is found to be a donor throughout In1−xGaxAs but an amphoteric impurity in GaSb1−yAsy.