J. C. DeWinter

Growth and properties of liquid-phase epitaxial GaAs1−<i>x</i>Sb<i>x</i>

R. E. Nahory, M. A. Pollack, J. C. DeWinter et al. · Journal of Applied Physics · 1977 · 115 citations

Semiconductors, Materials Science, Electrical Engineering +11

Integrated In _0.53 Ga _0.47 As <i>p-i-n</i> f.e.t. photoreceiver

R. F. Leheny, R. E. Nahory, M. A. Pollack et al. · Electronics Letters · 1980 · 98 citations

Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range

J. C. DeWinter, M. A. Pollack, A. K. Srivastava et al. · Journal of Electronic Materials · 1985 · 97 citations

Materials Science, Engineering, Crystal Material +5

Liquid phase epitaxial In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i> lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μm

M. A. Pollack, R. E. Nahory, J. C. DeWinter et al. · Applied Physics Letters · 1978 · 97 citations

Optical Materials, Engineering, Crystal Growth Technology +16

The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap

R. E. Nahory, M. A. Pollack, E. D. Beebe et al. · Journal of The Electrochemical Society · 1978 · 86 citations

Engineering, Crystal Growth Technology, Solidification +19