Concepedia

Integrated In <sub>0.53</sub> Ga <sub>0.47</sub> As <i>p-i-n</i> f.e.t. photoreceiver

R. F. Leheny, R. E. Nahory, M. A. Pollack, A. A. Ballman, E. D. Beebe, J. C. DeWinter, Richard J. Martin

Electronics Letters · 1980 · 98 citations · 3 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsIntegrated OpticsIntegrated PhotonicsOptical AmplifiersOptoelectronic MaterialsPhotodetectorsPhotonic Integrated CircuitsCompound Semiconductor PhotodetectorsIntegrated Optical AmplifiersIntegrated PhotodetectorsP-i-n PhotodetectorsPhotodetector MaterialsPhotodiode CircuitsPhotodiodes

Abstract

The first operation of an integrated p-i-n-photodiode/f.e.t.-amplifier on a single wafer of In0.53Ga0.47As grown lattice matched to an InP substrate is reported.

References

3

Metal-semiconductor surface barriers

Carver Mead · Solid-State Electronics · 1966 · 452 citations

Receivers for optical communications: A comparison of avalanche photodiodes with PIN-FET hybrids

David R. Smith, R.C. Hooper, I. Garrett · Optical and Quantum Electronics · 1978 · 56 citations

Engineering, Electrical Engineering, Materials Science +16

Increasing the effective barrier height of Schottky contacts to <i>n</i> –In <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> As

D. V. Morgan, J. Frey · Electronics Letters · 1978 · 40 citations

Engineering, Materials Engineering, Materials Science +15