Integrated In <sub>0.53</sub> Ga <sub>0.47</sub> As <i>p-i-n</i> f.e.t. photoreceiver - Concepedia

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Integrated In <sub>0.53</sub> Ga <sub>0.47</sub> As <i>p-i-n</i> f.e.t. photoreceiver

98

Citations

3

References

1980

Year

R. F. Leheny, R. E. Nahory, M. A. Pollack, A. A. Ballman, E. D. Beebe, J. C. DeWinter, Richard J. Martin

Electronics Letters

Abstract

The first operation of an integrated p-i-n-photodiode/f.e.t.-amplifier on a single wafer of In0.53Ga0.47As grown lattice matched to an InP substrate is reported.

References

	Year	Citations

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