E. D. Beebe

Quenching of the Hall Effect in a One-Dimensional Wire

M. L. Roukes, Axel Scherer, S. J. Allen et al. · Physical Review Letters · 1987 · 438 citations

Quantum Science, Engineering, Physics +10

Integrated In _0.53 Ga _0.47 As <i>p-i-n</i> f.e.t. photoreceiver

R. F. Leheny, R. E. Nahory, M. A. Pollack et al. · Electronics Letters · 1980 · 98 citations

The Liquid Phase Epitaxy of Al y Ga1 − y As1 − x Sb x and the Importance of Strain Effects near the Miscibility Gap

R. E. Nahory, M. A. Pollack, E. D. Beebe et al. · Journal of The Electrochemical Society · 1978 · 86 citations

Engineering, Crystal Growth Technology, Solidification +19

High-efficiency In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i>/InP photodetectors with selective wavelength response between 0.9 and 1.7 μm

Morris Washington, R. E. Nahory, M. A. Pollack et al. · Applied Physics Letters · 1978 · 75 citations

Photonic Sensor, Short Wavelength Optic, Engineering +20

Continuous operation of 1.0-μm-wavelength GaAs1−<i>x</i>Sb<i>x</i>/Al<i>y</i>Ga1−<i>y</i>As1−<i>x</i>Sb<i>x</i> double-heterostructure injection lasers at room temperature

R. E. Nahory, M. A. Pollack, E. D. Beebe et al. · Applied Physics Letters · 1976 · 71 citations

Wide-bandgap Semiconductor, Photonics, Room Temperature +13