Concepedia

Continuous operation of 1.0-μm-wavelength GaAs1−<i>x</i>Sb<i>x</i>/Al<i>y</i>Ga1−<i>y</i>As1−<i>x</i>Sb<i>x</i> double-heterostructure injection lasers at room temperature

R. E. Nahory, M. A. Pollack, E. D. Beebe, J. C. DeWinter, R. W. Dixon

Applied Physics Letters · 1976 · 71 citations · 9 references

DOI

Concepts

Abstract

Double-heterostructure GaAs1−xSbx/AlyGa1−yAs1−xSbx injection lasers have been operated continuously at room temperature for the first time. Emission was near 1.0 μm. The lowest threshold current density observed was 2.1 kA cm−2 dc.

References

9

Threshold reduction by the addition of phosphorus to the ternary layers of double-heterostructure GaAs lasers

J. C. Dyment, F. R. Nash, C. J. Hwang et al. · Applied Physics Letters · 1974 · 62 citations

, , +17

Near-equilibrium LPE growth of GaAs-Ga1−xAlxAs double heterostructures

L. R. Dawson · Journal of Crystal Growth · 1974 · 55 citations

, , +14

Room-temperature heterojunction laser diodes of In<i>x</i>Ga1−<i>x</i>As/In<i>y</i>Ga1−<i>y</i>P with emission wavelength between 0.9 and 1.15 μm

C. J. Nuese, G.H. Olsen · Applied Physics Letters · 1975 · 46 citations

, , +15

GaAsSb-AlGaAsSb Double Heterojunction Lasers

Koichi Sugiyama, Hisao Saito · Japanese Journal of Applied Physics · 1972 · 44 citations

, , +12

Low-threshold room-temperature double-heterostructure GaAs1−<i>x</i>Sb<i>x</i>/Al<i>y</i>Ga1−<i>y</i>As1−<i>x</i>Sb<i>x</i> injection lasers at 1-μm wavelengths

R. E. Nahory, M. A. Pollack · Applied Physics Letters · 1975 · 43 citations

, , +17