Hisao Saito

Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN

Toshio Nishida, Hisao Saito, Naoki Kobayashi · Applied Physics Letters · 2001 · 302 citations

White Oled, Electrical Engineering, Optical Materials +14

(AlAs)0.5(GaAs)0.5 fractional-layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition

Takashi Fukui, Hisao Saito · Applied Physics Letters · 1987 · 212 citations

Engineering, Crystal Growth Technology, Vicinal Surfaces +16

(AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor deposition

Takashi Fukui, Hisao Saito · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 198 citations

Materials Science, Semiconductors, Engineering +15

Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x<0.3%)

Toshiki Makimōto, Hisao Saito, Toshio Nishida et al. · Applied Physics Letters · 1997 · 104 citations

Optical Materials, Engineering, Optoelectronic Devices +17

Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region

Toshio Nishida, Hisao Saito, Naoki Kobayashi · Applied Physics Letters · 2001 · 90 citations

Photonics, Electrical Engineering, Optical Materials +15