Hisao Saito - Concepedia

Author

Hisao Saito

NTT Basic Research Laboratories

Also Known As

HISAO SAITO, Hisao SAITO, Hisao Saito, Hisao Saito Hisao Saito

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

NTT Basic Research Laboratories NTT (United States)NTT (Japan)Musashino Academia Musicae

About

Hisao Saito is an author at NTT Basic Research Laboratories specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	22	29	1.7K
2	Applied Physics	22	29	1.7K
3	Electrical Engineering	11	11	737
4	Chemistry	3	3	69
5	Natural Sciences	2	2	62

Hisao Saito

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN Toshio Nishida, Hisao Saito, Naoki Kobayashi Applied Physics Letters White OledElectrical EngineeringOptical MaterialsEngineeringSolid-state Lighting	2001	302
(AlAs)0.5(GaAs)0.5 fractional-layer superlattices grown on (001) vicinal surfaces by metalorganic chemical vapor deposition Takashi Fukui, Hisao Saito Applied Physics Letters EngineeringCrystal Growth TechnologyVicinal SurfacesChemical DepositionSemiconductor Nanostructures	1987	212
(AlAs)1/2(GaAs)1/2 fractional-layer superlattices grown on (001) vicinal GaAs substrates by metal–organic chemical vapor deposition Takashi Fukui, Hisao Saito Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Materials ScienceSemiconductorsEngineeringCrystalline DefectsMisoriented Towards	1988	198
Excitonic luminescence and absorption in dilute GaAs1−xNx alloy (x&lt;0.3%) Toshiki Makimōto, Hisao Saito, Toshio Nishida, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesLuminescence PropertySemiconductor Nanostructures	1997	104
Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region Toshio Nishida, Hisao Saito, Naoki Kobayashi Applied Physics Letters PhotonicsElectrical EngineeringOptical MaterialsEngineeringSolid-state Lighting	2001	90
(InAs)<sub>1</sub>(GaAs)<sub>1</sub> Layered Crystal Grown by MOCVD Takashi Fukui, Hisao Saito Japanese Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringLayered CrystalsLow Growth Rate	1984	89
MOVPE growth of strained InGaAsN/GaAs quantum wells Hisao Saito, Toshiki Makimōto, Naoki Kobayashi Journal of Crystal Growth EngineeringPhysicsApplied PhysicsMovpe GrowthOptoelectronics	1998	67
Terrace width ordering mechanism during epitaxial growth on a slightly tilted substrate Y. Tokura, Hisao Saito, Takashi Fukui Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringCrystal Growth TechnologySurface Science	1989	61
AlGaN-based ultraviolet light-emitting diodes grown on bulk AlN substrates Toshio Nishida, Toshiki Makimōto, Hisao Saito, Applied Physics Letters Materials ScienceAluminium NitrideElectrical EngineeringSolid-state LightingBulk Aln Substrate	2004	61
Natural Superstep Formed on GaAs Vicinal Surface by Metalorganic Chemical Vapor Deposition Takashi Fukui, Hisao Saito Japanese Journal of Applied Physics Natural Superstep FormedEngineeringStep Flow GrowthChemical DepositionIi-vi Semiconductor	1990	61

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