Near-equilibrium LPE growth of GaAs-Ga1−xAlxAs double heterostructures

JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE

I. Hayashi, M. B. Panish, P. W. Foy et al. · Applied Physics Letters · 1970 · 591 citations

Engineering, Electrical Engineering, Materials Science +17

GaAs–Al<i>x</i>Ga1−<i>x</i>As Double Heterostructure Injection Lasers

I. Hayashi, M. B. Panish, F. K. Reinhart · Journal of Applied Physics · 1971 · 198 citations

Engineering, Electrical Engineering, Materials Science +17

Thermal conductivity of Ga1−<i>x</i>Al<i>x</i>As alloys

Martin A. Afromowitz · Journal of Applied Physics · 1973 · 185 citations

Natural Sciences, Materials Science, Physics +17

A low-threshold room-temperature injection laser

I. Hayashi, M. B. Panish, P. W. Foy · IEEE Journal of Quantum Electronics · 1969 · 147 citations

Engineering, Electrical Engineering, Optics +11

Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnet

D. L. Rode · Journal of Crystal Growth · 1973 · 131 citations

Natural Sciences, Materials Science, Physics +14