Current Injection Confinement
Current Injection Confinement is a semiconductor laser design technique that restricts the flow of injected electrical current to a defined active region, thereby enhancing carrier recombination efficiency and reducing threshold current by minimizing lateral current spreading.
190
Publications
8.3K
Citations
841
Authors
194
Institutions
Publications per year
2017–2026
21
Parents
190
A proposed class of hetero-junction injection lasers
H. Kroemer · Proceedings of the IEEE · 1963 · 392 citations
A 271.8 nm deep-ultraviolet laser diode for room temperature operation
Ziyi Zhang, Maki Kushimoto, Tadayoshi Sakai et al. · Applied Physics Express · 2019 · 341 citations · Full text
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194
AT&T (United States)
Bedminster, United States
12 h-index
62 publications
2K citations
Tokyo Institute of Technology
Tokyo, Japan
8 h-index
56 publications
1.9K citations
University of California, Santa Barbara
Santa Barbara, United States
8 h-index
32 publications
1.5K citations
California Institute of Technology
Pasadena, United States
6 h-index
26 publications
835 citations
Hitachi (Japan)
Tokyo, Japan
5 h-index
18 publications
1.1K citations
Nagoya University
Nagoya, Japan
5 h-index
25 publications
3.3K citations
The University of Tokyo
Tokyo, Japan
4 h-index
8 publications
429 citations

Ferdinand-Braun-Institut
Berlin, Germany
4 h-index
16 publications
478 citations
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43 publications · 1.9K citations
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16 publications · 707 citations
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15 publications · 378 citations
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IPTEL · 20 publications · 511 citations
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10 publications · 715 citations
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