Current Injection Confinement

Current Injection Confinement is a semiconductor laser design technique that restricts the flow of injected electrical current to a defined active region, thereby enhancing carrier recombination efficiency and reducing threshold current by minimizing lateral current spreading.

190

Publications

8.3K

Citations

841

Authors

194

Institutions

Publications per year

2017–2026

21

Authors

841

  1. NN
    Nobuhiko Nishiyama

    Tokyo Institute of Technology, Japan

    6 publications · 147 citations

    6

    h-index

  2. RA
    R. A. Logan

    AT&T (United States), United States

    6 publications · 115 citations

    6

    h-index

  3. SA
    Shigehisa Arai

    Tokyo Institute of Technology, Japan

    5 publications · 212 citations

    5

    h-index

  4. TO
    Tadashi Okumura

    Tokyo Institute of Technology, Japan

    5 publications · 137 citations

    5

    h-index

  5. WT
    W. T. Tsang

    AT&T (United States), United States

    5 publications · 98 citations

    5

    h-index

1–5 of 841

Venues

  1. Applied Physics Letters

    43 publications · 1.9K citations

    26

    h-index

  2. IEEE Journal of Quantum Electronics

    16 publications · 707 citations

    14

    h-index

  3. Electronics Letters

    15 publications · 378 citations

    13

    h-index

  4. IEEE Photonics Technology Letters

    IPTEL · 20 publications · 511 citations

    13

    h-index

  5. Journal of Applied Physics

    10 publications · 715 citations

    10

    h-index

1–5