Blue-green injection lasers containing pseudomorphic Zn1−xMgxSySe1−y cladding layers and operating up to 394 K

Concepts

EngineeringMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptoelectronic DevicesOptoelectronic MaterialsQuantum ConfinementQuantum Well DevicesQuantum WellsSemiconductor LasersCurrent Injection ConfinementHeterostructuresNanostructured Optoelectronic MaterialsOptical ConfinementOptical Confinement StructuresQuantum Well Lasers

TL;DR

We describe the performance of blue‑green injection lasers with Zn₁₋ₓMgₓSySe₁₋ᵧ cladding layers. The lasers are separate‑confinement heterostructures featuring a ZnS₀.₀₆Se₀.₉₄ waveguide, a single Cd₀.₂Zn₀.₈Se strained quantum well, and a pseudomorphic structure on GaAs. The devices achieve record low threshold current densities of 500 A/cm² and pulsed output powers of 500 mW at room temperature, lase up to 394 K with wavelengths of 516 nm (RT) and 496 nm (85 K), and exhibit enhanced optical confinement evidenced by a widened far‑field pattern.

Abstract

We describe the performance of blue-green injection lasers containing Zn1−xMgxSySe1−y cladding layers. The devices have yielded the lowest reported threshold current densities (500 A/cm2) and the highest reported pulsed output powers (500 mW) at room temperature. Lasing has been observed at temperatures as high as 394 K. The room temperature and 85 K lasing wavelengths are 516 and 496 nm, respectively. The use of Zn1−xMgxSySe1−y, instead of ZnSzSe1−z, cladding layers provides a clear improvement in optical confinement, demonstrated by the widening of the far-field pattern in the direction perpendicular to the layers. The lasers are separate-confinement heterostructures with a ZnS0.06Se0.94 waveguiding region and a single Cd0.2Zn0.8Se strained quantum well. The entire structure is pseudomorphic with the GaAs substrate.