J. M. Gaines - Concepedia

Author

J. M. Gaines

Philips (United States)

Also Known As

J. Gaines, J. M. Gaines, J.M. Gaines, Jim Gaines

Publications

834

Citations

H-Index

Concepts

All Affiliations

Philips (United States)Philips (Netherlands)Philips (Finland)Northern Illinois University Princeton University

About

J. M. Gaines is an author at Philips (United States) specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	23	740
2	Applied Physics	14	24	753
3	Electrical Engineering	4	4	60
4	Natural Sciences	2	2	68
5	Chemistry	2	2	68

J. M. Gaines

Publications

753

Citations

H-Index

Page 1

	Year	Citations
Blue-green injection lasers containing pseudomorphic Zn1−<i>x</i>Mg<i>x</i>S<i>y</i>Se1−<i>y</i> cladding layers and operating up to 394 K J. M. Gaines, R. R. Drenten, K. W. Haberern, Applied Physics Letters Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Material	1993	230
Correlation between radiative transitions and structural defects in zinc selenide epitaxial layers Khurram Shahzad, J. Petruzzello, D. J. Olego, Applied Physics Letters EngineeringLow DensitySemiconductor NanostructuresSemiconductorsHigh Density	1990	70
Effect of N doping on the structural properties of ZnSe epitaxial layers grown by molecular beam epitaxy J. Petruzzello, J. M. Gaines, P. van der Sluis, Applied Physics Letters Point DefectsEngineeringSemiconductor NanostructuresSemiconductorsIi-vi Semiconductor	1993	59
ZnSe(100) surface: Atomic configurations, composition, and surface dipole W. Chen, Antoine Kahn, P. Soukiassian, Physical review. B, Condensed matter EngineeringChemical CompositionChemistryElectronic StructureSurface Electron Affinity	1994	55
MBE growth on vicinal GaAs(001) surfaces studied by scanning tunneling microscopy M. D. Pashley, K. W. Haberern, J. M. Gaines Surface Science Materials ScienceEngineeringTunneling MicroscopySurface ScienceApplied Physics	1992	39
ZnSe(100): The surface and the formation of Schottky barriers with Al and Au W. Chen, Antoine Kahn, P. Soukiassian, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorSchottky Barriers	1994	34
Growth on (001) and vicinal (001) GaAs surfaces in a combined scanning tunneling microscope/molecular-beam epitaxy system M. D. Pashley, K. W. Haberern, J. M. Gaines Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringMicroscopyGrowth ChamberFlat GaasSemiconductors	1991	28
Structural characterization of II-VI separate confinement heterostructure lasers with Zn1−<i>x</i>Mg<i>x</i>S<i>y</i>Se1−<i>y</i> cladding layers J. Petruzzello, J. M. Gaines, P. van der Sluis Journal of Applied Physics Structural CharacterizationOptical MaterialsEngineeringLaser ApplicationsLaser Material	1994	22
Electrical characterization of <i>p</i>-type ZnSe:N and Zn1−<i>x</i>Mg<i>x</i>S<i>y</i>Se1−<i>y</i>:N thin films P. M. Mensz, S. P. Herko, K. W. Haberern, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringThin Film PhysicsResistivity Measurements	1993	20
Characterization of low defect density blue-green lasers J. Petruzzello, K. W. Haberern, S. P. Herko, Journal of Crystal Growth PhotonicsEngineeringLaser ScienceOptical PropertiesApplied Physics	1996	18

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