M. D. Pashley - Concepedia

Author

M. D. Pashley

Philips (United States)

Also Known As

Donald William Pashley, M D Pashley, M. D. Pashley, M. Pashley, M.D. Pashley, MD Pashley

Publications

3.4K

Citations

H-Index

Concepts

All Affiliations

Philips (United States)IBM Research - Thomas J. Watson Research Center Columbia University Philips (Finland)Cavendish Hospital

About

M. D. Pashley is an author at Philips (United States) specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	28	2.8K
2	Applied Physics	19	23	2K
3	Electrical Engineering	6	6	1.1K
4	Natural Sciences	1	1	14
5	Chemistry	1	1	14

M. D. Pashley

Publications

2.8K

Citations

H-Index

Page 1

	Year	Citations
Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001) M. D. Pashley Physical review. B, Condensed matter EngineeringElectron DiffractionPrincipal ReconstructionsMolecular-beam EpitaxyElectron Microscopy	1989	789
Red, green, and blue LEDs for white light illumination S. Muthu, Frank J. P. Schuurmans, M. D. Pashley IEEE Journal of Selected Topics in Quantum Electronics White OledIllumination ModelingLight RegulationOptical MaterialsEngineering	2002	416
Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxy M. D. Pashley, K. W. Haberern, J. M. Gaines Applied Physics Letters Materials ScienceSemiconductorsEngineeringTunneling MicroscopyPhysics	1991	175
Adhesion and micromechanical properties of metal surfaces M. D. Pashley, J. B. Pethica, D. Tabor Wear Materials ScienceMicromechanical PropertiesEngineeringAdhesive MaterialMechanical Engineering	1984	162
Red, green, and blue LED based white light generation: issues and control S. Muthu, Frank J. P. Schuurmans, M. D. Pashley Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344) White OledPhotonicsLight RegulationLed PerformanceEngineering	2003	160
Compensating surface defects induced by Si doping of GaAs M. D. Pashley, K. W. Haberern Physical Review Letters Materials ScienceElectrical EngineeringEngineeringPhysicsSi Doping	1991	139
Different Fermi-level pinning behavior on<i>n</i>- and<i>p</i>-type GaAs(001) M. D. Pashley, K. W. Haberern, R. M. Feenstra, Physical review. B, Condensed matter SemiconductorsMaterials ScienceSemiconductor TechnologySemiconductor DeviceEngineering	1993	129
GaAs(111)<i>A</i>-(2×2) reconstruction studied by scanning tunneling microscopy K. W. Haberern, M. D. Pashley Physical review. B, Condensed matter SemiconductorsMaterials ScienceEngineeringTunneling MicroscopyCrystalline Defects	1990	111
Further consideration of the DMT model for elastic contact M. D. Pashley Colloids and Surfaces Nonlinear ElasticityEngineeringElasticity (Physics)MechanicsContact Mechanic	1984	102
Tunneling spectroscopy on compensating surface defects induced by Si doping of molecular-beam epitaxially grown GaAs(001) M. D. Pashley, K. W. Haberern, R. M. Feenstra Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Surface Fermi LevelIi-vi SemiconductorElectrical EngineeringEpitaxial GrowthEngineering	1992	91

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