Correlation between radiative transitions and structural defects in zinc selenide epitaxial layers

Abstract

We present low-temperature photoluminescence and transmission electron microscopy data to show that two transitions I0V at ∼2.774 eV and Y0 at ∼2.60 eV, frequently observed in unintentionally doped zinc selenide epitaxial layers, are directly related to structural defects. It is shown that these transitions are strong in those samples which have very low background impurities and high density of structural defects and weak in those cases that have either high background impurities or low density of structural defects.