Low-threshold room-temperature double-heterostructure GaAs1−<i>x</i>Sb<i>x</i>/Al<i>y</i>Ga1−<i>y</i>As1−<i>x</i>Sb<i>x</i> injection lasers at 1-μm wavelengths

Abstract

Double-heterostructure (DH) injection lasers based on the GaAs1−xSbx/AlyGa1−yAs1−xSbx system have been fabricated using liquid phase epitaxial growth techniques and operated at room temperature at wavelengths in the 1-μm region. The observed room-temperature threshold current densities, as low as 2100 A cm−2, are comparable to those of GaAs/AlGaAs devices of similar geometry.