T.J. Zamerowski

Asymmetric Cracking in III–V Compounds

G.H. Olsen, M. S. Abrahams, T.J. Zamerowski · Journal of The Electrochemical Society · 1974 · 106 citations

Materials Science, Engineering, Severe Plastic Deformation +15

Reduction of dislocation densities in heteroepitaxial III−V VPE semiconductors

G.H. Olsen, M. S. Abrahams, C. J. Buiocchi et al. · Journal of Applied Physics · 1975 · 76 citations

Semiconductors, Materials Science, Dislocation Densities +11

Crystal growth and properties of binary, ternary and quaternary (In,Ga)(As,P) alloys grown by the hydride vapor phase epitaxy technique

G.H. Olsen, T.J. Zamerowski · Progress in Crystal Growth and Characterization · 1979 · 67 citations

Materials Science, Materials Engineering, Engineering +8

Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

A. G. Sigai, C. J. Nuese, R.E. Enstrom et al. · Journal of The Electrochemical Society · 1973 · 59 citations

Engineering, Laser Applications, Optoelectronic Devices +18

2.6 μm InGaAs photodiodes

Ramon U. Martinelli, T.J. Zamerowski, P. A. Longeway · Applied Physics Letters · 1988 · 57 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +17