R.E. Enstrom

Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range

Dennis G. Fisher, R.E. Enstrom, J. S. Escher et al. · Journal of Applied Physics · 1972 · 154 citations

Surface Escape Probability, Wide-bandgap Semiconductor, Optical Materials +22

Vapor Growth of In[sub 1−x]Ga[sub x]P for P-N Junction Electroluminescence

A. G. Sigai, C. J. Nuese, R.E. Enstrom et al. · Journal of The Electrochemical Society · 1973 · 59 citations

Engineering, Laser Applications, Optoelectronic Devices +18

3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy

R. Menna, D. Capewell, Ramon U. Martinelli et al. · Applied Physics Letters · 1991 · 56 citations

Laser Action, Photonics, Engineering +15

Preparation, Microstructure, and High-Field Superconducting Properties of Nb3 Sn Doped with Group-III, -IV, -V, and -VI Elements

R.E. Enstrom, J. R. Appert · Journal of Applied Physics · 1972 · 43 citations

Superconducting Material, Engineering, Chemistry +16

LONG-WAVELENGTH PHOTOEMISSION FROM Ga1 − <i>x</i>In<i>x</i>As ALLOYS

Dennis G. Fisher, R.E. Enstrom, B. F. Williams · Applied Physics Letters · 1971 · 37 citations

Materials Science, Photonics, Surface Escape Probability +13