D. Capewell

3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy

R. Menna, D. Capewell, Ramon U. Martinelli et al. · Applied Physics Letters · 1991 · 56 citations

Laser Action, Photonics, Engineering +15

2.3- to 2.7-μm room-temperature cw operation of InGaAsSb/AlGaAsSb broad-contact and single-mode ridge-waveguide SCH-QW diode lasers

D.Z. Garbuzov, R. Menna, M. Maiorov et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 1999 · 20 citations

Wide-bandgap Semiconductor, Engineering, Laser Science +18

Self-aligned-gate GaInAs microwave MISFET's

P.D. Gardner, S.G. Liu, S.Y. Narayan et al. · IEEE Electron Device Letters · 1986 · 17 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +13

InP depletion-mode microwave MISFET's

Peter Gardner, S.Y. Narayan, S.G. Liu et al. · IEEE Electron Device Letters · 1987 · 15 citations

Electrical Engineering, Power Output, Engineering +11

Tunable surface-normal modulators operating near 1550 nm with a high-extinction ratio at high temperatures

Hooman Mohseni, W.K. Chan, H. An et al. · IEEE Photonics Technology Letters · 2005 · 11 citations

Stepped Quantum Wells, Engineering, High-extinction Ratio +18