3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor-phase epitaxy

Abstract

We have observed laser action at λ=3.06 μm in In0.77Ga0.23As0.74Sb0.26/InP0.7Sb0.3 double heterojunction, diode lasers, which were grown by organometallic vapor-phase epitaxy. The maximum operating temperature was T=35 K, and typical threshold current densities were 200–330 A/cm2. At temperatures up to 35 K, the lasing wavelength decreased with increasing temperature owing to a band-filling effect.