P. K. York

Ultralow-loss broadened-waveguide high-power 2 μm AlGaAsSb/InGaAsSb/GaSb separate-confinement quantum-well lasers

D.Z. Garbuzov, Ramon U. Martinelli, H. Lee et al. · Applied Physics Letters · 1996 · 100 citations

Engineering, Electrical Engineering, Materials Science +16

Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thickness

K. J. Beernink, P. K. York, J. J. Coleman et al. · Applied Physics Letters · 1989 · 87 citations

Engineering, Electrical Engineering, Materials Science +17

InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition

P. K. York, K. J. Beernink, G. Esteban Fernández et al. · Applied Physics Letters · 1989 · 83 citations

Engineering, Electrical Engineering, Materials Science +17

Room-temperature 2.78 μm AlGaAsSb/InGaAsSb quantum-well lasers

H. Lee, P. K. York, R. Menna et al. · Applied Physics Letters · 1995 · 80 citations

Engineering, Electrical Engineering, Materials Science +17

4 W quasi-continuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes

D.Z. Garbuzov, Ramon U. Martinelli, H. Lee et al. · Applied Physics Letters · 1997 · 80 citations

Engineering, Electrical Engineering, Optoelectronics +16