Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thickness

Abstract

Data are presented on the efficiency, reliability, and temperature dependence of wavelength and threshold for strained-layer InxGa1−xAs-GaAs (x∼0.25, λ>1.06 μm) separate confinement heterostructure lasers for several thicknesses near the critical thickness. Devices with well thicknesses of 100 Å exhibit excellent time-zero characteristics and reliability, while those with 143 Å wells have higher initial thresholds and degrade rapidly.