R. G. Waters - Concepedia

Author

R. G. Waters

University of Illinois Urbana-Champaign

Also Known As

R G. Waters, R Waters, R. G. Waters, R. Waters, R.G. Waters, Robert G. Waters, Robert Waters, Ryan Waters

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

University of Illinois Urbana-Champaign Hunter College City University of New York Princeton University Cornell University

About

R. G. Waters is an author at University of Illinois Urbana-Champaign specializing in applied physics, photonics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	18	26	1K
2	Applied Physics	18	25	1K
3	Electrical Engineering	8	8	357
4	Natural Sciences	1	1	16
5	Chemistry	1	1	16

R. G. Waters

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers R. G. Waters, D. P. Bour, S.L. Yellen, IEEE Photonics Technology Letters Optical PumpingPhotonicsEngineeringLaser SciencePhysics	1990	113
Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m S.L. Yellen, Allan H. Shepard, R. J. Dalby, IEEE Journal of Quantum Electronics EngineeringLaser ScienceLaser ApplicationsLaser MaterialLaser Reliability	1993	100
Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thickness K. J. Beernink, P. K. York, J. J. Coleman, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsElectrical EngineeringCritical ThicknessEngineering	1989	87
Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers P.S. Zory, A. R. Reisinger, R. G. Waters, Applied Physics Letters Wide-bandgap SemiconductorPhotonicsAlgaas Diode LasersEngineeringLaser Science	1986	81
Cavity length dependence of the threshold behavior in thin quantum well semiconductor lasers A. R. Reisinger, P.S. Zory, R. G. Waters IEEE Journal of Quantum Electronics EngineeringLaser ScienceCavity QedLaser PhysicsLaser Applications	1987	75
Long-lived InGaAs quantum well lasers S.E. Fischer, R. G. Waters, D. Fekete, Applied Physics Letters Optical PumpingPhotonicsQuantum ScienceBest Gaas LasersEngineering	1989	66
Operating characteristics of single-quantum-well AlGaAs/GaAs high-power lasers David K. Wagner, R. G. Waters, P. Tihanyi, IEEE Journal of Quantum Electronics Optical MaterialsEngineeringLaser ScienceLaser PhysicsLaser Applications	1988	56
Carrier recombination rates in strained-layer InGaAs-GaAs quantum wells Y.-C. Chen, P. Wang, J. J. Coleman, IEEE Journal of Quantum Electronics SemiconductorsElectrical EngineeringEngineeringPhysicsApplied Physics	1991	48
Viable strained-layer laser at λ=1100 nm R. G. Waters, P. K. York, K. J. Beernink, Journal of Applied Physics	1990	47
Dark-line-resistant, aluminum-free diode laser at 0.8 mu m S.L. Yellen, Allan H. Shepard, C.M. Harding, IEEE Photonics Technology Letters Quantum SciencePhotonicsEngineeringPhysicsQuantum Device	1992	44

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