Structural properties of the ZnSe/GaAs system grown by molecular-beam epitaxy

J. Petruzzello, B. Greenberg, D. A. Cammack, +1

Journal of Applied Physics

Materials ScienceSemiconductorsZnse/gaas SystemIi-vi SemiconductorEngineering +12

Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m

S.L. Yellen, Allan H. Shepard, R. J. Dalby, +7

IEEE Journal of Quantum Electronics

EngineeringLaser ScienceLaser ApplicationsLaser MaterialLaser Reliability +15

Electron beam pumped lasing in ZnSe/ZnSSe superlattice structuresn grown by molecular-beam epitaxy

D. A. Cammack, R. J. Dalby, Hugo J. Cornelissen, +1

Journal of Applied Physics

Materials ScienceIi-vi SemiconductorElectrical EngineeringOptical PumpingMolecular-beam Epitaxy +13

Effect of lattice mismatch in ZnSe epilayers grown on GaAs by molecular beam epitaxy

K. Mohammed, D. A. Cammack, R. J. Dalby, +4

Applied Physics Letters

EngineeringZnse EpilayersOptoelectronic DevicesSemiconductor NanostructuresSemiconductors +14

Pulsed anodic oxides for III-V semiconductor device fabrication

Michael Grove, David Hudson, P.S. Zory, +3

Journal of Applied Physics

Optical MaterialsEngineeringAnodic OxidesLaser ApplicationsLaser Material +15

Ge diffusion at Ge/GaAs heterojunctions

Kandula V. N. Sarma, R. J. Dalby, Kenneth Rose, +3

Journal of Applied Physics

SemiconductorsWide-bandgap SemiconductorDiffusion Heat TreatmentSemiconductor TechnologyEngineering +10

Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well

R. G. Waters, R. J. Dalby, John A. Baumann, +2

IEEE Photonics Technology Letters

Optical PumpingPhotonicsQuantum ScienceEngineeringPhysics +9

Quantum confinement and strain effects in ZnSe-ZnS<i>x</i>Se1−<i>x</i> strained-layer superlattices

K. Mohammed, D. J. Olego, P. R. Newbury, +3

Applied Physics Letters

Materials ScienceIi-vi SemiconductorQuantum ConfinementEngineeringPhotoluminescence +10

Single-quantum-well laser with 11.2 degree transverse beam divergence

Y.C. Chen, R. G. Waters, R. J. Dalby

Electronics Letters

PhotonicsQuantum ScienceQuantum PhotonicsPassive WaveguidesEngineering +7

Reflection high-energy electron diffraction observations during growth of ZnS<i>x</i>Se1−<i>x</i>(0≤<i>x</i>≤1) by molecular-beam epitaxy

Hugo J. Cornelissen, D. A. Cammack, R. J. Dalby

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

EngineeringCrystal Growth TechnologyElectron DiffractionSemiconductor NanostructuresIi-vi Semiconductor +14