R. J. Dalby

Structural properties of the ZnSe/GaAs system grown by molecular-beam epitaxy

J. Petruzzello, B. Greenberg, D. A. Cammack et al. · Journal of Applied Physics · 1988 · 155 citations

Materials Science, Semiconductors, Znse/gaas System +14

Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m

S.L. Yellen, Allan H. Shepard, R. J. Dalby et al. · IEEE Journal of Quantum Electronics · 1993 · 100 citations

Engineering, Laser Science, Laser Applications +17

Electron beam pumped lasing in ZnSe/ZnSSe superlattice structuresn grown by molecular-beam epitaxy

D. A. Cammack, R. J. Dalby, Hugo J. Cornelissen et al. · Journal of Applied Physics · 1987 · 66 citations

Materials Science, Ii-vi Semiconductor, Electrical Engineering +15

Effect of lattice mismatch in ZnSe epilayers grown on GaAs by molecular beam epitaxy

K. Mohammed, D. A. Cammack, R. J. Dalby et al. · Applied Physics Letters · 1987 · 58 citations

Engineering, Znse Epilayers, Optoelectronic Devices +16

Pulsed anodic oxides for III-V semiconductor device fabrication

Michael Grove, David Hudson, P.S. Zory et al. · Journal of Applied Physics · 1994 · 49 citations

Optical Materials, Engineering, Anodic Oxides +17