Electron beam pumped lasing in ZnSe/ZnSSe superlattice structuresn grown by molecular-beam epitaxy

Abstract

We report the first operation of molecular-beam epitaxy (MBE) grown ZnSe/ZnSxSe1−x superlattice electron beam pumped lasers in the temperature range 100–300 K and the first room-temperature operation of MBE grown ZnSe on GaAs transverse geometry electron beam pumped lasers. Threshold current densities of 2.5 A/cm2 at 100 K were achieved by both devices. At room temperature, threshold current was 5 A/cm2 for the ZnSe devices and 12 A/cm2 for the superlattice.