Allan H. Shepard

Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 mu m

S.L. Yellen, Allan H. Shepard, R. J. Dalby et al. · IEEE Journal of Quantum Electronics · 1993 · 101 citations

Engineering, Electrical Engineering, Materials Science +17

Efficient nanocoax‐based solar cells

Michael Naughton, Krzysztof Kempa, Zhiwei Ren et al. · physica status solidi (RRL) - Rapid Research Letters · 2010 · 91 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Dark-line-resistant, aluminum-free diode laser at 0.8 mu m

S.L. Yellen, Allan H. Shepard, C.M. Harding et al. · IEEE Photonics Technology Letters · 1992 · 44 citations

Engineering, Electrical Engineering, Materials Science +13

Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well

R. G. Waters, R. J. Dalby, John A. Baumann et al. · IEEE Photonics Technology Letters · 1991 · 39 citations

Engineering, Electrical Engineering, Materials Science +14