Concepedia

Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well

R. G. Waters, R. J. Dalby, John A. Baumann, J.L. De Sanctis, Allan H. Shepard

IEEE Photonics Technology Letters · 1991 · 39 citations · 14 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesOptoelectronic DevicesQuantum Well DevicesQuantum WellsSemiconductor LasersStrain EngineeringQuantum Well Laser DiodesQuantum Well LasersQuantum Well StructuresSemiconductor Laser DiodesStrained Quantum Wells

Abstract

Quantum-well lasers emitting at 0.8 mu m and resistant to

References

14

InGaAs/AlGaAs strained single quantum well diode lasers with extremely low threshold current density and high efficiency

H. K. Choi, C. A. Wang · Applied Physics Letters · 1990 · 157 citations

Engineering, Electrical Engineering, Materials Science +17

Degradation of III–V Opto‐Electronic Devices

Osamu Ueda · Journal of The Electrochemical Society · 1988 · 120 citations

Engineering, Electrical Engineering, Materials Science +17

Inhibited dark-line defect formation in strained InGaAs/AlGaAs quantum well lasers

R. G. Waters, D. P. Bour, S.L. Yellen et al. · IEEE Photonics Technology Letters · 1990 · 115 citations

Engineering, Electrical Engineering, Materials Science +17

Long-lived InGaAs quantum well lasers

S.E. Fischer, R. G. Waters, D. Fekete et al. · Applied Physics Letters · 1989 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Low degradation rate in strained InGaAs/AlGaAs single quantum well lasers

D. P. Bour, D. B. Gilbert, K.B. Fabian et al. · IEEE Photonics Technology Letters · 1990 · 62 citations

Engineering, Electrical Engineering, Materials Science +17