Applied Physics Letters · 1989 · 66 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsQuantum Well DevicesQuantum WellsSemiconductor HeterostructuresSemiconductor LasersSemiconductor PhysicsStrain EngineeringDegradationHeterostructure DevicesLasersMetalorganic Chemical Vapor DepositionQuantum Well HeterostructuresQuantum Well LasersStrained Quantum WellsStrained-layer Heterostructures
Pseudomorphic InGaAs lasers with cw operating lifetimes exceeding 5000 h are reported for the first time. The device structure, grown by low-pressure metalorganic chemical vapor deposition, incorporates a single In0.37Ga0.63As strained-layer quantum well in a GaAs/AlGaAs graded-index separate confinement heterostructure. These devices are remarkable for their immunity to sudden failure and for their (gradual) degradation rates which are comparable to the best GaAs lasers.
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Strained-layer quantum-well injection laser
W. D. Laidig, P. J. Caldwell, Y. F. Lin et al. · Applied Physics Letters · 1984 · 120 citations