Applied Physics Letters · 1986 · 81 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsOptical Properties Of SemiconductorsQuantum WellsSemiconductor LasersSemiconductor PhysicsConduction BandHigh-energy Radiation ProcessesLaser ThresholdQuantum Well HeterostructuresQuantum Well LasersThreshold BehaviorValence BandValence Band Structure
Thermally induced threshold wavelength shifts of 50 nm have been observed in short cavity length diode lasers fabricated from thin quantum well AlGaAs. Analysis suggests that the high-energy radiation is generated by transitions between the n=2 level in the conduction band and the n=2 heavy hole level in the valence band. The threshold characteristic temperature (T0) of the laser material is found to be a strong function of cavity length.
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