J. R. Appert

Preparation, Microstructure, and High-Field Superconducting Properties of Nb3 Sn Doped with Group-III, -IV, -V, and -VI Elements

R.E. Enstrom, J. R. Appert · Journal of Applied Physics · 1972 · 43 citations

Natural Sciences, Materials Science, Physics +17

Metallurgical amd electroluminescence characteristics of vapor-phase and liquid-phase epitaxial junction structures of InxGa1−xAs

M. Ettenberg, C. J. Nuese, J. R. Appert et al. · Journal of Electronic Materials · 1975 · 31 citations

Engineering, Materials Engineering, Materials Science +13

Photoemission characteristics of transmission-mode negative electron affinity GaAs and (ln,Ga)As vapor-grown structures

Dennis G. Fisher, R.E. Enstrom, J. S. Escher et al. · IEEE Transactions on Electron Devices · 1974 · 30 citations

Engineering, Materials Engineering, Materials Science +17

Effect of Impurity Gas Additions on the Superconducting Critical Current of Vapor-Deposited Nb[sub 3]Sn

R.E. Enstrom, J. J. Hanak, J. R. Appert et al. · Journal of The Electrochemical Society · 1972 · 26 citations

Natural Sciences, Materials Science, Physics +16

Influence of Gas-Phase Stoichiometry on the Defect Morphology, Impurity Doping, and Electroluminescence Efficiency of Vapor-Grown GaAs P-N Junctions

R.E. Enstrom, C. J. Nuese, J. R. Appert et al. · Journal of The Electrochemical Society · 1974 · 21 citations

Engineering, Materials Engineering, Materials Science +17