Concepedia

Low-threshold Current Lasers

Low-Threshold Current Lasers is a semiconductor laser device characterized by its ability to achieve lasing operation at exceptionally low electrical current input, distinguishing it from conventional semiconductor lasers through its optimized material structure and cavity design that significantly reduce the threshold current density required for population inversion and stimulated emission.

853

Publications

37.1K

Citations

2.7K

Authors

350

Institutions

Publications per year

2017–2026

44

Parents

Publications

853

1.3 μm room-temperature GaAs-based quantum-dot laser

Diana L. Huffaker, G. Park, Zhihui Zou et al. · Applied Physics Letters · 1998 · 761 citations

, , +15

Surface emitting semiconductor lasers

Kenichi Iga, Fumio Koyama, Shinya Kinoshita · IEEE Journal of Quantum Electronics · 1988 · 649 citations

, , +17

Native-oxide defined ring contact for low threshold vertical-cavity lasers

Diana L. Huffaker, D.G. Deppe, K. Kiran Kumar et al. · Applied Physics Letters · 1994 · 547 citations

, , +17

Extremely low room-temperature threshold currentdensity diode lasersusing InAs dots in In <sub>0.15</sub> Ga <sub>0.85</sub> As quantum well

G.T. Liu, A. Stintz, H. Li et al. · Electronics Letters · 1999 · 480 citations

, , +16

Low-threshold electrically pumped vertical-cavity surface-emitting microlasers

J. L. Jewell, Ya‐Ze Lee, Sarah J. Walker et al. · Electronics Letters · 1989 · 333 citations

, , +15

1–5 of 853

Authors

2.7K

  1. DL
    Diana L. Huffaker

    University of California, Los Angeles, United States

    18 publications · 2.4K citations

    18

    h-index

  2. SA
    Shigehisa Arai

    Tokyo Institute of Technology, Japan

    27 publications · 692 citations

    18

    h-index

  3. AY
    A. Yariv

    California Institute of Technology, United States

    25 publications · 858 citations

    17

    h-index

  4. KI
    Kenichi Iga

    Tokyo Institute of Technology, Japan

    25 publications · 1.5K citations

    17

    h-index

  5. FK
    Fumio Koyama

    Tokyo Institute of Technology, Japan

    22 publications · 1.4K citations

    16

    h-index

1–5 of 2.7K

Institutions

350

  1. AT&T (United States)

    Bedminster, United States

    25 h-index

    203 publications

    8.3K citations

  2. University of California, Santa Barbara

    Santa Barbara, United States

    23 h-index

    207 publications

    13.5K citations

  3. Tokyo Institute of Technology

    Tokyo, Japan

    23 h-index

    272 publications

    10.7K citations

  4. California Institute of Technology

    Pasadena, United States

    21 h-index

    149 publications

    5.1K citations

  5. University of Illinois Urbana-Champaign

    Urbana, United States

    19 h-index

    85 publications

    2.7K citations

  6. The University of Texas at Austin

    Austin, United States

    18 h-index

    49 publications

    8K citations

  7. Fujitsu (Japan)

    Kawasaki, Japan

    16 h-index

    132 publications

    4.2K citations

  8. Hitachi (Japan)

    Tokyo, Japan

    15 h-index

    83 publications

    2.6K citations

1–8 of 350

Venues

  1. Applied Physics Letters

    234 publications · 12.4K citations

    61

    h-index

  2. Electronics Letters

    212 publications · 7.5K citations

    41

    h-index

  3. IEEE Photonics Technology Letters

    IPTEL · 111 publications · 5.1K citations

    41

    h-index

  4. IEEE Journal of Quantum Electronics

    65 publications · 3.3K citations

    33

    h-index

  5. Japanese Journal of Applied Physics

    JJAP · 51 publications · 1.6K citations

    22

    h-index

1–5