C. J. Hwang - Concepedia

Author

C. J. Hwang

National Cheng Kung University

Also Known As

C J. Hwang, C. J. Hwang, C.J. Hwang, Changyong HWANG, Hwang, Cheal-Ho;

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

National Cheng Kung University Hewlett-Packard (United States)

About

C. J. Hwang is an author at National Cheng Kung University specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	42	1.7K
2	Applied Physics	22	32	1.4K
3	Natural Sciences	5	5	153
4	Chemical Engineering	1	1	11
5	Chemistry	1	1	11

C. J. Hwang

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
Optical Properties of <i>n</i>-Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence Measurements C. J. Hwang Journal of Applied Physics Wide-bandgap SemiconductorDiffusion LengthsOptical MaterialsEngineeringOptical Absorption	1969	159
Doping Dependence of Hole Lifetime in <i>n</i>-Type GaAs C. J. Hwang Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringDiffusion LengthSemiconductor Materials	1971	110
Evidence for Luminescence Involving Arsenic Vacancy-Acceptor Centers in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type GaAs C. J. Hwang Physical Review SemiconductorsMath XmlnsPeak ShiftIi-vi SemiconductorEngineering	1969	94
Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. I. Densities of States in the Active Regions C. J. Hwang Physical review. B, Solid state Categoryquantum ElectronicsEngineeringLaser ScienceImpurity DistributionImpurity Potentials	1970	85
Calculation of Fermi Energy and Bandtail Parameters in Heavily Doped and Degenerate <i>n</i>-Type GaAs C. J. Hwang Journal of Applied Physics Categoryquantum ElectronicsCharge ExcitationsEngineeringElectronic StructureSemiconductor Device	1970	76
Quantum Efficiency and Radiative Lifetime of the Band-to-Band Recombination in Heavily Doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type GaAs C. J. Hwang Physical review. B, Solid state Wide-bandgap SemiconductorEngineeringSemiconductorsMath XmlnsExternal Efficiency	1972	71
Numerical study of gas-particle flow in a solid rocket nozzle C. J. Hwang, Guan C. Chang AIAA Journal Rarefied FlowEngineeringSolid Rocket NozzleAerospace EngineeringNumerical Solution Procedure	1988	70
Dependence of threshold and electron lifetime on acceptor concentration in GaAs–Ga1−<i>x</i>Al<i>x</i>As lasers C. J. Hwang, J. C. Dyment Journal of Applied Physics Optical MaterialsEngineeringLaser ScienceLaser PhysicsLaser Applications	1973	69
Optical Properties of <i>n</i>-Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te-Doped GaAs C. J. Hwang Journal of Applied Physics Optical MaterialsEngineeringEfficient Hole TrapsOptoelectronic DevicesSemiconductor Nanostructures	1969	68
Threshold reduction by the addition of phosphorus to the ternary layers of double-heterostructure GaAs lasers J. C. Dyment, F. R. Nash, C. J. Hwang, Applied Physics Letters Ii-vi SemiconductorPhotonicsOptical MaterialsEngineeringLaser Science	1974	62

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