C. J. Hwang

Optical Properties of <i>n</i>-Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence Measurements

C. J. Hwang · Journal of Applied Physics · 1969 · 159 citations

Wide-bandgap Semiconductor, Diffusion Lengths, Optical Materials +18

Doping Dependence of Hole Lifetime in <i>n</i>-Type GaAs

C. J. Hwang · Journal of Applied Physics · 1971 · 110 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +18

Evidence for Luminescence Involving Arsenic Vacancy-Acceptor Centers in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-Type GaAs

C. J. Hwang · Physical Review · 1969 · 94 citations

Semiconductors, Math Xmlns, Peak Shift +13

Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. I. Densities of States in the Active Regions

C. J. Hwang · Physical review. B, Solid state · 1970 · 85 citations

Categoryquantum Electronics, Engineering, Laser Science +19

Calculation of Fermi Energy and Bandtail Parameters in Heavily Doped and Degenerate <i>n</i>-Type GaAs

C. J. Hwang · Journal of Applied Physics · 1970 · 76 citations · Full text

Categoryquantum Electronics, Charge Excitations, Engineering +22