L. A. Heimbrook

Reactive ion etching of InP using CH4/H2 mixtures: Mechanisms of etching and anisotropy

Todd R. Hayes, M. Dreisbach, W. C. Dautremont–Smith et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1989 · 142 citations

Significant Hydrocarbon Film, Engineering, Electron-beam Lithography +19

Investigation of carbon incorporation in GaAs using13C-enriched trimethylarsenic and13Ch4

R. M. Lum, J. K. Klingert, D. W. Kisker et al. · Journal of Electronic Materials · 1988 · 74 citations

Materials Engineering, Semiconductors, Engineering +3

Fluorescence from the 1 1<i>B</i> <i>u</i> state of <i>t</i> <i>r</i> <i>a</i> <i>n</i> <i>s</i>,<i>t</i> <i>r</i> <i>a</i> <i>n</i> <i>s</i>-1,3,5,7-octatetraene in a free jet

L. A. Heimbrook, Bryan E. Kohler, Irvin J. Levy · The Journal of Chemical Physics · 1984 · 66 citations

Engineering, Chemistry, Electronic Excited State +20

Free jet excitation and emission spectra of diphenylbutadiene

L. A. Heimbrook, Bryan E. Kohler, Thomas A. Spiglanin · Proceedings of the National Academy of Sciences · 1983 · 55 citations · Full text

Metalorganic chemical vapor deposition of aluminum from trimethylamine alane using Cu and TiN nucleation activators

M. E. Gross, Kin P. Cheung, Cass Fleming et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1991 · 49 citations

Aluminium Nitride, Engineering, Al Deposition +18