Sulfide treated GaAs MISFET's with gate insulator of photo-CVD grown P/sub 3/N/sub 5/ film

Abstract

Sulfide passivated GaAs MISFET's with the gate insulator of photo-CVD grown P/sub 3/N/sub 5/ films have been successfully fabricated. The device shows the drain current instability less than 22% for the period of 1.0 s /spl sim/1.0/spl times/10/sup 4/ s, due to excellent properties of sulfide treated P/sub 3/N/sub 5//GaAs interface. The effective electron mobility and extrinsic transconductance of the device are about 1300 cm/sup 2//V/spl middot/sec and 1.33 mS, respectively, at room temperature. To estimate the effects of sulfide treatment on P/sub 3/N/sub 5//GaAs interfacial properties, GaAs-MIS diodes are also fabricated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>