Noboru Fukuhara

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Ryo Suzuki, Noriyuki Taoka, Masafumi Yokoyama et al. · Applied Physics Letters · 2012 · 164 citations

Engineering, Electrical Engineering, Materials Science +17

Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

Masafumi Yokoyama, Tetsuji Yasuda, Hideki Takagi et al. · Applied Physics Express · 2009 · 82 citations

Engineering, Electrical Engineering, Materials Science +17

High mobility CMOS technologies using III–V/Ge channels on Si platform

Shinichi Takagi, S.-H. Kim, Masafumi Yokoyama et al. · Solid-State Electronics · 2013 · 70 citations

Engineering, Computer Engineering, Electrical Engineering +12

III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

Masafumi Yokoyama, Tetsuji Yasuda, Hideki Takagi et al. · Applied Physics Letters · 2010 · 65 citations

Engineering, Materials Engineering, Materials Science +17

Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

Masafumi Yokoyama, Ryo Iida, Sanghyeon Kim et al. · IEEE Electron Device Letters · 2011 · 62 citations

Engineering, Electrical Engineering, Materials Science +17