Ryo Iida

Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

Masafumi Yokoyama, Ryo Iida, Sanghyeon Kim et al. · IEEE Electron Device Letters · 2011 · 62 citations

Oxide Heterostructures, Semiconductors, Electrical Engineering +13

Self-Aligned Metal Source/Drain In_<i>x</i>Ga_1-<i>x</i>As n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy

Sanghyeon Kim, Masafumi Yokoyama, Noriyuki Taoka et al. · Applied Physics Express · 2011 · 60 citations

Materials Science, Semiconductors, Electrical Engineering +13

Formation of III–V-on-insulator structures on Si by direct wafer bonding

Masafumi Yokoyama, Ryo Iida, Yuki Ikku et al. · Semiconductor Science and Technology · 2013 · 52 citations

Engineering, Optoelectronic Devices, Integrated Circuits +17

Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding

Masafumi Yokoyama, Ryo Iida, S. H. Kim et al. · 2010 · 48 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +15

Chronic Japanese schistosomiasis and hepatocellular carcinoma: ten years of follow-up in Yamanashi Prefecture, Japan.

Futoshi Iida, Ryo Iida, Hiroshi Kamijo et al. · PubMed · 1999 · 47 citations · Full text

Pathology, Cirrhosis, Schistosomiasis Patients +17