Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

Masafumi Yokoyama, Ryo Iida, Sanghyeon Kim, +11

IEEE Electron Device Letters

Oxide HeterostructuresSemiconductorsElectrical EngineeringMaterials ScienceSub Xmlns +11

Self-Aligned Metal Source/Drain In_<i>x</i>Ga_1-<i>x</i>As n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy

Sanghyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, +11

Applied Physics Express

Materials ScienceSemiconductorsElectrical EngineeringSchottky Barrier HeightEngineering +11

Formation of III–V-on-insulator structures on Si by direct wafer bonding

Masafumi Yokoyama, Ryo Iida, Yuki Ikku, +9

Semiconductor Science and Technology

EngineeringOptoelectronic DevicesIntegrated CircuitsSilicon On InsulatorSemiconductor Device +15

Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding

Masafumi Yokoyama, Ryo Iida, S. H. Kim, +11

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +13

Chronic Japanese schistosomiasis and hepatocellular carcinoma: ten years of follow-up in Yamanashi Prefecture, Japan.

Futoshi Iida, Ryo Iida, Hiroshi Kamijo, +5

PubMed

PathologyCirrhosisSchistosomiasis PatientsViral HepatitisChronic Schistosomiasis Cases +15

Impact of Fermi level pinning inside conduction band on electron mobility of In&lt;inf&gt;x&lt;/inf&gt;Ga&lt;inf&gt;1&amp;#x2212;x&lt;/inf&gt;As MOSFETs and mobility enhancement by pinning modulation

Noriyuki Taoka, Masafumi Yokoyama, S.H. Kim, +12

EngineeringStrongly Correlated Electron SystemsSemiconductor DeviceFermi Level PinningSemiconductors +15

Experimental Study on Electron Mobility in In_xGa_1-xAs-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors With In Content Modulation and MOS Interface Buffer Engineering

Sanghyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, +11

IEEE Transactions on Nanotechnology

EngineeringContent ModulationSemiconductor MaterialsStrongly Correlated Electron SystemsElectron Mobility +21

High Performance Extremely Thin Body InGaAs-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates with Ni–InGaAs Metal Source/Drain

Sanghyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, +11

Applied Physics Express

Materials ScienceSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering +10

Impact of Fermi level pinning inside conduction band on electron mobility in InGaAs metal-oxide-semiconductor field-effect transistors

Noriyuki Taoka, Masafumi Yokoyama, Sang Hyeon Kim, +12

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringInside Conduction BandEngineering +12

Electron Mobility Enhancement of Extremely Thin Body In$_{0.7}$Ga$_{0.3}$As-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Substrates by Metal–Oxide–Semiconductor Interface Buffer Layers

Sanghyeon Kim, Masafumi Yokoyama, Noriyuki Taoka, +11

Applied Physics Express

SemiconductorsExtremely Thin BodyElectrical EngineeringSemiconductor TechnologyEngineering +11