Mitsuru Takenaka

Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance

Shinichi Takagi, Toshifumi Iisawa, Tsutomu Tezuka et al. · IEEE Transactions on Electron Devices · 2008 · 340 citations

Engineering, Electrical Engineering, Materials Science +17

Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

Hiroshi Matsubara, Takashi Sasada, Mitsuru Takenaka et al. · Applied Physics Letters · 2008 · 318 citations

Engineering, Materials Engineering, Materials Science +17

Efficient low-loss InGaAsP/Si hybrid MOS optical modulator

Jae‐Hoon Han, Junichi Fujikata, Shigeki Takahashi et al. · Nature Photonics · 2017 · 229 citations · Full text

Engineering, Electrical Engineering, Materials Science +10

High-Mobility Ge pMOSFET With 1-nm EOT $\hbox{Al}_{2} \hbox{O}_{3}/\hbox{GeO}_{x}/\hbox{Ge}$ Gate Stack Fabricated by Plasma Post Oxidation

Rui Zhang, Takashi Iwasaki, Noriyuki Taoka et al. · IEEE Transactions on Electron Devices · 2011 · 175 citations

Engineering, Electrical Engineering, Materials Science +17

1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density

Ryo Suzuki, Noriyuki Taoka, Masafumi Yokoyama et al. · Applied Physics Letters · 2012 · 164 citations

Engineering, Electrical Engineering, Materials Science +17