Takashi Sasada

Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

Hiroshi Matsubara, Takashi Sasada, Mitsuru Takenaka et al. · Applied Physics Letters · 2008 · 318 citations

Materials Science, Oxide Heterostructures, Semiconductor Technology +14

Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

Takashi Sasada, Yosuke Nakakita, Mitsuru Takenaka et al. · Journal of Applied Physics · 2009 · 101 citations

Engineering, Direct Thermal Oxidation, Thermal Oxidation +19

Interface-controlled self-align source/drain Ge pMOSFETs using thermally-oxidized GeO<inf>2</inf> interfacial layers

Yosuke Nakakita, Ryosho Nakane, Takashi Sasada et al. · 2008 · 36 citations

Materials Engineering, Interfacial Layers, Electrical Engineering +11

Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO₂Interfacial Layers

Yosuke Nakakita, Ryosho Nakakne, Takashi Sasada et al. · Japanese Journal of Applied Physics · 2011 · 25 citations · Full text

Semiconductors, Oxide Heterostructures, Electrical Engineering +11

Interface-Controlled Self-Align Source/Drain Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated Using Thermally Oxidized GeO₂Interfacial Layers

Yosuke Nakakita, Ryosho Nakakne, Takashi Sasada et al. · Japanese Journal of Applied Physics · 2011 · 20 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +11