Masahiko Hata

Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding

Masafumi Yokoyama, Tetsuji Yasuda, Hideki Takagi et al. · Applied Physics Express · 2009 · 82 citations

Engineering, Electrical Engineering, Materials Science +17

Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators

Younghyun Kim, Mitsuru Takenaka, Takenori Osada et al. · Scientific Reports · 2014 · 66 citations · Full text

Engineering, Materials Engineering, Materials Science +17

III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface

Masafumi Yokoyama, Tetsuji Yasuda, Hideki Takagi et al. · Applied Physics Letters · 2010 · 65 citations

Engineering, Materials Engineering, Materials Science +17

High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and <inline-formula> <tex-math notation="TeX">$V_{\rm th}$ </tex-math></inline-formula> Tunability

Sanghyeon Kim, Masafumi Yokoyama, Ryosho Nakane et al. · IEEE Transactions on Electron Devices · 2014 · 65 citations

Engineering, Electrical Engineering, Materials Science +16

Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

Masafumi Yokoyama, Ryo Iida, Sanghyeon Kim et al. · IEEE Electron Device Letters · 2011 · 62 citations

Engineering, Electrical Engineering, Materials Science +17