The effects of gate length variation and trapping effects on the transient response of AlGaN/GaN HEMT’s on SiC substrates

AlGaN/GaN HEMTs-an overview of device operation and applications

Umesh K. Mishra, P. Parikh, Yifeng Wu · Proceedings of the IEEE · 2002 · 2.2K citations

Engineering, Electrical Engineering, Materials Science +17

Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

O. Ambacher, B. E. Foutz, J. Smart et al. · Journal of Applied Physics · 2000 · 1.7K citations

Engineering, Materials Science, Physics +17

High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

S.T. Sheppard, K. Doverspike, W.L. Pribble et al. · IEEE Electron Device Letters · 1999 · 538 citations

Engineering, Electrical Engineering, Materials Science +17

Analysis of deep levels in <i>n</i>-type GaN by transient capacitance methods

Peter Hacke, Theeradetch Detchprohm, K. Hiramatsu et al. · Journal of Applied Physics · 1994 · 289 citations

Engineering, Materials Engineering, Materials Science +17

Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates

R. Gaška, J. Yang, A. Osinsky et al. · Applied Physics Letters · 1998 · 214 citations

Engineering, Materials Science, Physics +17