Concepedia

Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition

K. Fröhlich, R. Lupták, Edmund Dobročka, K. Hušeková, K. Čičo, A. Rosová, Mindaugas Lukosius, A. Abrutis, P. Písečný, J.P. Espinós

Materials Science in Semiconductor Processing · 2006 · 24 citations · 16 references

DOI

Concepts

References

16

Electrical characteristics of high quality La<sub>2</sub>O<sub>3</sub> gate dielectric with equivalent oxide thickness of 5 /spl Aring/

Yung‐Hsien Wu, M.Y. Yang, Albert Chin et al. · IEEE Electron Device Letters · 2000 · 210 citations

, , +15

Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides (Pr2O3, Sm2O3, Gd2O3, and Dy2O3)

Sanghun Jeon, Hyunsang Hwang · Journal of Applied Physics · 2003 · 158 citations

, , +11

Rare-earth oxide thin films for gate dielectrics in microelectronics

Markku Leskelä, Kaupo Kukli, Mikko Ritala · Journal of Alloys and Compounds · 2005 · 148 citations

, , +5

Ternary rare-earth metal oxide high-k layers on silicon oxide

Chao Zhao, T. Witters, Bert Brijs et al. · Applied Physics Letters · 2005 · 133 citations · Full text

, , +11

Rare-earth oxide thin films as gate oxides in MOSFET transistors

Markku Leskelä, Mikko Ritala · Journal of Solid State Chemistry · 2003 · 115 citations

, , +6