Tomohiro Shiraishi

Composition, chemical structure, and electronic band structure of rare earth oxide/Si(1 0 0) interfacial transition layer

Takanori Hattori, T. Yoshida, Tomohiro Shiraishi et al. · Microelectronic Engineering · 2004 · 87 citations

Materials Science, Ii-vi Semiconductor, Rare Earth Mineral +9

Chemical and electronic structures of Lu2O3/Si interfacial transition layer

Hiroshi Nohira, Tomohiro Shiraishi, Tomohiro Nakamura et al. · Applied Surface Science · 2003 · 39 citations

Materials Science, Engineering, Surface Science +5

The origin of a highly resistive layer at a growth-interrupted interface of GaAs grown by molecular-beam epitaxy

Y. Iimura, Tomohiro Shiraishi, Hidetoshi Takasugi et al. · Journal of Applied Physics · 1987 · 29 citations

Deep-level Transient Spectroscopy, Electrical Engineering, Growth-interrupted Interface +13

Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(1 0 0) interfacial transition layer

Hiroshi Nohira, Tomohiro Shiraishi, Kazutoshi Takahashi et al. · Applied Surface Science · 2004 · 26 citations

Materials Science, Epitaxial Growth, Engineering +10

X-ray photoelectron spectroscopy study on SiO2/Si interface structures formed by three kinds of atomic oxygen at 300 °C

Mitsuaki Shioji, Tomohiro Shiraishi, Kazutoshi Takahashi et al. · Applied Physics Letters · 2004 · 18 citations

Optical Materials, Engineering, Silicon On Insulator +16