Hidetoshi Takasugi

Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy

Mitsuo Kawabe, Toshio Ueda, Hidetoshi Takasugi · Japanese Journal of Applied Physics · 1987 · 70 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Design and performance of a novel automatic fiber line testing system with OTDR for optical subscriber loops

Nobuo Tomita, Hidetoshi Takasugi, N. Atobe et al. · Journal of Lightwave Technology · 1994 · 42 citations

Engineering, Optical Transmission System, Measurement +19

Initial Growth and Dislocation Accommodation of GaAs on Si(100) by Molecular Beam Epilaxy

Hidetoshi Takasugi, Mitsuo Kawabe, Yoshio Bando · Japanese Journal of Applied Physics · 1987 · 37 citations

Materials Science, Semiconductors, Epitaxial Growth +14

The origin of a highly resistive layer at a growth-interrupted interface of GaAs grown by molecular-beam epitaxy

Y. Iimura, Tomohiro Shiraishi, Hidetoshi Takasugi et al. · Journal of Applied Physics · 1987 · 29 citations

Deep-level Transient Spectroscopy, Electrical Engineering, Growth-interrupted Interface +13

Solid-phase crystal growth of molecular-beam-deposited amorphous GaAs

Shiyoshi Yokoyama, D. Yui, Hideo Tanigawa et al. · Journal of Applied Physics · 1987 · 17 citations

Materials Science, Semiconductors, Epitaxial Growth +14