Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(1 0 0) interfacial transition layer

High-κ gate dielectrics: Current status and materials properties considerations

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Dielectric polarizabilities of ions in oxides and fluorides

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Natural Sciences, Materials Science, Physics +15

Photoemission study of energy-band alignments and gap-state density distributions for high-<i>k</i> gate dielectrics

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Natural Sciences, Materials Science, Physics +17

A new ESCA instrument with improved surface sensitivity, fast imaging properties and excellent energy resolution

U. Gelius, B. Wannberg, P. Baltzer et al. · Journal of Electron Spectroscopy and Related Phenomena · 1990 · 268 citations

Natural Sciences, Astronomy, Geophysics +11

Periodicity in the band gap variation of Ln2X3 (X = O, S, Se) in the lanthanide series

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