Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(1 0 0) interfacial transition layer - Concepedia

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Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(1 0 0) interfacial transition layer

26

Citations

7

References

2004

Year

Hiroshi Nohira, Tomohiro Shiraishi, Kazutoshi Takahashi, Takanori Hattori, I. Kashiwagi, C. Ohshima, S. Ohmi, Hiroshi Iwai, S. Joumori, K. Nakajima,

Applied Surface Science

Materials ScienceEpitaxial GrowthEngineeringLayered MaterialOxide ElectronicsSurface ScienceApplied PhysicsCondensed Matter PhysicsAtomic-scale Depth ProfilingSemiconductor MaterialChemistrySilicon On InsulatorInterfacial Transition Layer

References

	Year	Citations

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