C. Ohshima

Statistics

Publications

Citations

352

H-Index

Active since

2003

Affiliations

Tokyo Institute of Technology(Current)

Musashi University

Kyoto University

C. Ohshima is an author at Tokyo Institute of Technology specializing in materials science, semiconductor interfaces, and semiconductor device materials.

Publications per year

2003–2004

Publications

Characterization of La[sub 2]O[sub 3] and Yb[sub 2]O[sub 3] Thin Films for High-k Gate Insulator Application

S. Ohmi, Chiho Kobayashi, I. Kashiwagi et al. · Journal of The Electrochemical Society · 2003 · 131 citations

Natural Sciences, Materials Science, Physics +17

Advanced gate dielectric materials for sub-100 nm CMOS

Hiroshi Iwai, Shun-ichiro Ohmi, S. Akama et al. · 2003 · 95 citations

Engineering, Materials Engineering, Materials Science +17

Composition, chemical structure, and electronic band structure of rare earth oxide/Si(1 0 0) interfacial transition layer

Takanori Hattori, T. Yoshida, Tomohiro Shiraishi et al. · Microelectronic Engineering · 2004 · 87 citations

Natural Sciences, Materials Science, Physics +17

Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(1 0 0) interfacial transition layer

Hiroshi Nohira, Tomohiro Shiraishi, Kazutoshi Takahashi et al. · Applied Surface Science · 2004 · 26 citations

Natural Sciences, Materials Engineering, Materials Science +17

Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics

C. Ohshima, Junichi Taguchi, I. Kashiwagi et al. · Applied Surface Science · 2003 · 13 citations

Engineering, Materials Engineering, Materials Science +17

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