Effect of surface treatment of Si substrates and annealing condition on high-k rare earth oxide gate dielectrics

High-κ gate dielectrics: Current status and materials properties considerations

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Formation of a stratified lanthanum silicate dielectric by reaction with Si(001)

M. Copel, E. Cartier, F. M. Ross · Applied Physics Letters · 2001 · 186 citations

Natural Sciences, Materials Engineering, Materials Science +17

Gadolinium silicate gate dielectric films with sub-1.5 nm equivalent oxide thickness

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Natural Sciences, Materials Engineering, Materials Science +17

High Quality Ultrathin La2O3 Films for High-k Gate Insulator

Shun-ichiro Ohmi, Chiho Kobayashi, Koki Aizawa et al. · 2001 · 18 citations

Natural Sciences, Materials Engineering, Materials Science +14