K. Hušeková

Growth of High-Dielectric-Constant TiO[sub 2] Films in Capacitors with RuO[sub 2] Electrodes

K. Fröhlich, M. Ťapajna, A. Rosová et al. · Electrochemical and Solid-State Letters · 2008 · 80 citations

Materials Science, Materials Engineering, Dielectric Constant +15

Ru and RuO2 gate electrodes for advanced CMOS technology

K. Fröhlich, K. Hušeková, D. Machajdı́k et al. · Materials Science and Engineering B · 2004 · 61 citations

Electrical Engineering, Engineering, Advanced Cmos Technology +5

Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors

Lauri Aarik, Tõnis Arroval, Raul Rammula et al. · Thin Solid Films · 2014 · 38 citations

Materials Science, Engineering, Oxide Electronics +10

Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology

P. Písečný, K. Hušeková, K. Fröhlich et al. · Materials Science in Semiconductor Processing · 2004 · 37 citations

Materials Science, Electrical Engineering, Epitaxial Growth +12

Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics

K. Čičo, K. Hušeková, M. Ťapajna et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2011 · 35 citations

Semiconductors, Gate Dielectrics, Electrical Engineering +11