K. Hušeková - Concepedia

Author

K. Hušeková

Institute of Electrical Engineering of the Slovak Academy of Sciences ORCID

Also Known As

K Husekova, K Hušeková, K. Husekova, K. Huseková, K. Hušeková, K. Hušeková, KRISTÍNA HUŠEKOVÁ, Kristina Husekova, Kristina Huseková, Kristina Hušeková

Publications

Citations

H-Index

Concepts

All Affiliations

Institute of Electrical Engineering of the Slovak Academy of Sciences Slovak Academy of Sciences University of Tartu Slovak University of Technology in Bratislava Instituto de Ciencia de Materiales de Sevilla

About

K. Hušeková is an author at Institute of Electrical Engineering of the Slovak Academy of Sciences specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	33	831
2	Applied Physics	18	29	733
3	Electrical Engineering	15	18	469
4	Chemical Engineering	4	4	72
5	Chemistry	4	4	87

K. Hušeková

Publications

902

Citations

H-Index

Page 1

	Year	Citations
Growth of High-Dielectric-Constant TiO[sub 2] Films in Capacitors with RuO[sub 2] Electrodes K. Fröhlich, M. Ťapajna, A. Rosová, Electrochemical and Solid-State Letters Materials ScienceMaterials EngineeringDielectric ConstantEngineeringElectrode-electrolyte Interface	2008	80
Ru and RuO2 gate electrodes for advanced CMOS technology K. Fröhlich, K. Hušeková, D. Machajdı́k, Materials Science and Engineering B Electrical EngineeringEngineeringAdvanced Cmos TechnologyNanoelectronicsApplied Physics	2004	61
Atomic layer deposition of high-quality Al2O3 and Al-doped TiO2 thin films from hydrogen-free precursors Lauri Aarik, Tõnis Arroval, Raul Rammula, Thin Solid Films Materials ScienceEngineeringOxide ElectronicsSurface ScienceApplied Physics	2014	38
Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology P. Písečný, K. Hušeková, K. Fröhlich, Materials Science in Semiconductor Processing Materials ScienceElectrical EngineeringEpitaxial GrowthLanthanum Oxide FilmsEngineering	2004	37
Electrical properties of InAlN/GaN high electron mobility transistor with Al2O3, ZrO2, and GdScO3 gate dielectrics K. Čičo, K. Hušeková, M. Ťapajna, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena SemiconductorsGate DielectricsElectrical EngineeringElectronic DevicesEngineering	2011	35
Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties M. Ťapajna, R. Stoklas, D. Gregušová, Applied Surface Science Materials ScienceOxide HeterostructuresElectrical EngineeringEngineering‘ Surface Donors	2017	33
Growth of α- and β-Ga <sub>2</sub> O <sub>3</sub> epitaxial layers on sapphire substrates using liquid-injection MOCVD Fridrich Egyenes, Filip Gucmann, K. Hušeková, Semiconductor Science and Technology	2020	33
Heteroepitaxial growth of Ga2O3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga2O3 power devices Fedor Hrubišák, K. Hušeková, Xiang Zheng, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films EngineeringSolid-state ChemistryHeteroepitaxial GrowthLiquid-injection MocvdChemistry	2023	33
Impact of plasma treatment on electrical properties of TiO<sub>2</sub>/RuO<sub>2</sub>based DRAM capacitor Boris Hudec, K. Hušeková, A. Rosová, Journal of Physics D Applied Physics Materials ScienceElectrical EngineeringEngineeringElectrode-electrolyte InterfaceTio2/ruo2 Interface	2013	32
Electrical properties of TiO2-based MIM capacitors deposited by TiCl4 and TTIP based atomic layer deposition processes Boris Hudec, K. Hušeková, Aivar Tarre, Microelectronic Engineering Materials ScienceMaterials EngineeringElectrical EngineeringEngineeringTio2-based Mim Capacitors	2011	31

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