Growth of High-Dielectric-Constant TiO[sub 2] Films in Capacitors with RuO[sub 2] Electrodes

Abstract

Titanium dioxide thin films were grown on layers by atomic layer deposition. The stabilizing effect of the bottom rutile-type layer resulted in growth of the rutile films at temperatures above . Stabilization of the rutile phase occurred due to local epitaxial growth of the polycrystalline structure, as revealed by transmission electron microscopy. A dielectric constant as high as 155 and equivalent oxide thickness (EOT) as low as 0.5 nm were determined from the capacitance–voltage measurements for the films grown above . A leakage current density of at 1 V bias voltage was obtained for the films with EOT equal to 0.5 nm.