Concepedia

Growth of lanthanum oxide films for application as a gate dielectric in CMOS technology

P. Písečný, K. Hušeková, K. Fröhlich, L. Harmatha, J. Šoltýs, D. Machajdı́k, J.P. Espinós, M. Jergel, J. Jakabovič

Materials Science in Semiconductor Processing · 2004 · 37 citations · 10 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesThin FilmsCmos Circuit DesignDielectricsOxide SemiconductorsSemiconductor Device MaterialsSemiconductor Thin FilmsThin Film Electrical PropertiesGate Dielectric EngineeringGate DielectricsGate OxidesLanthanide OxidesOxide DielectricsSemiconductor Oxide Thin FilmsThin Oxide Films

References

10

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.9K citations

Engineering, Materials Engineering, Materials Science +17

MOS (Metal Oxide Semiconductor) Physics and Technology

K.J.S. Cave · IEE Proceedings I Solid State and Electron Devices · 1983 · 1.7K citations

Engineering, Chemical Engineering, Nuclear Engineering +12

Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics

Supratik Guha, E. Cartier, M. Gribelyuk et al. · Applied Physics Letters · 2000 · 238 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrical characteristics of high quality La<sub>2</sub>O<sub>3</sub> gate dielectric with equivalent oxide thickness of 5 /spl Aring/

Yung‐Hsien Wu, M.Y. Yang, Albert Chin et al. · IEEE Electron Device Letters · 2000 · 211 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Formation and stability of lanthanum oxide thin films deposited from β-diketonate precursor

Minna Nieminen, Matti Putkonen, Lauri Niinistö · Applied Surface Science · 2001 · 198 citations

Natural Sciences, Materials Engineering, Materials Science +12