Yung‐Hsien Wu

Electrical characteristics of high quality La₂O₃ gate dielectric with equivalent oxide thickness of 5 /spl Aring/

Yung‐Hsien Wu, M.Y. Yang, Albert Chin et al. · IEEE Electron Device Letters · 2000 · 210 citations

Reliability, /Spl Aring/, Electrical Engineering +15

Fast phase transitions induced by picosecond electrical pulses on phase change memory cells

W. J. Wang, Lu Shi, Ruixue Zhao et al. · Applied Physics Letters · 2008 · 173 citations

Non-volatile Memory, Engineering, Microscopy +19

High-Performance$hboxSrTiO_3$MIM Capacitors for Analog Applications

K.C. Chiang, C.-C. Huang, G.L. Chen et al. · IEEE Transactions on Electron Devices · 2006 · 91 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Impact of Plasma Treatment on Reliability Performance for HfZrO_x-Based Metal-Ferroelectric-Metal Capacitors

Kuen-Yi Chen, Pin‐Hsuan Chen, Ruei-Wen Kao et al. · IEEE Electron Device Letters · 2017 · 81 citations

Materials Science, Materials Engineering, Electrical Engineering +14

High density metal-insulator-metal capacitor based on ZrO2∕Al2O3∕ZrO2 laminate dielectric

Yung‐Hsien Wu, Chien-Kang Kao, Bo‐Yu Chen et al. · Applied Physics Letters · 2008 · 74 citations

Materials Science, Materials Engineering, Electrical Engineering +12