Yung‐Hsien Wu - Concepedia

Author

Yung‐Hsien Wu

National Tsing Hua University ORCID

Also Known As

Wu, Y.H., Y H Wu, Y Wu, Y. -H. Wu, Y. H Wu, Y. H. Wu, Y. Wu, Y.-H Wu, Y.-H. Wu, Y.H. Wu

221

Publications

Citations

H-Index

Concepts

All Affiliations

National Tsing Hua University National Yang Ming Chiao Tung University National Synchrotron Radiation Research Center ProMOS Technologies (Taiwan)

About

Yung‐Hsien Wu is an author at National Tsing Hua University specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	28	83	2.4K
2	Applied Physics	26	75	2.2K
3	Chemistry	6	6	164
4	Chemical Engineering	5	5	156
5	Natural Sciences	2	2	38

Yung‐Hsien Wu

Publications

2.6K

Citations

H-Index

Page 1

	Year	Citations
Electrical characteristics of high quality La<sub>2</sub>O<sub>3</sub> gate dielectric with equivalent oxide thickness of 5 /spl Aring/ Yung‐Hsien Wu, M.Y. Yang, Albert Chin, IEEE Electron Device Letters Reliability/Spl Aring/Electrical EngineeringReliability EngineeringElectrical Characteristics	2000	210
Fast phase transitions induced by picosecond electrical pulses on phase change memory cells W. J. Wang, Lu Shi, Ruixue Zhao, Applied Physics Letters Non-volatile MemoryEngineeringMicroscopyPhase Transition SpeedPhase Change Memory	2008	173
High-Performance$hboxSrTiO_3$MIM Capacitors for Analog Applications K.C. Chiang, C.-C. Huang, G.L. Chen, IEEE Transactions on Electron Devices Materials EngineeringMaterials ScienceElectrical EngineeringAnalog CapacitorsEngineering	2006	91
Impact of Plasma Treatment on Reliability Performance for HfZrO<sub>x</sub>-Based Metal-Ferroelectric-Metal Capacitors Kuen-Yi Chen, Pin‐Hsuan Chen, Ruei-Wen Kao, IEEE Electron Device Letters Materials ScienceMaterials EngineeringElectrical EngineeringFe ReliabilityEngineering	2017	81
High density metal-insulator-metal capacitor based on ZrO2∕Al2O3∕ZrO2 laminate dielectric Yung‐Hsien Wu, Chien-Kang Kao, Bo‐Yu Chen, Applied Physics Letters Materials ScienceMaterials EngineeringElectrical EngineeringDielectricsEngineering	2008	74
FeFET Memory Featuring Large Memory Window and Robust Endurance of Long-Pulse Cycling by Interface Engineering using High-k AlON Chi-Yu Chan, Kuen-Yi Chen, Hao‐Kai Peng, Non-volatile MemorySi SubstrateEngineeringEmerging Memory TechnologyComputer Architecture	2020	69
Enabling large memory window and high reliability for FeFET memory by integrating AlON interfacial layer Hao‐Kai Peng, Chi-Yu Chan, Kuen-Yi Chen, Applied Physics Letters Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureSemiconductors	2021	64
High Speed and Large Memory Window Ferroelectric HfZrO₂ FinFET for High-Density Nonvolatile Memory Siao-Cheng Yan, Guan-Min Lan, Chong-Jhe Sun, IEEE Electron Device Letters Non-volatile MemoryElectrical EngineeringEngineeringNanoelectronicsEmerging Memory Technology	2021	64
High quality La/sub 2/O/sub 3/ and Al/sub 2/O/sub 3/ gate dielectrics with equivalent oxide thickness 5-10 Å Albert Chin, Yung‐Hsien Wu, S.B. Chen, Materials EngineeringMaterials ScienceElectrical EngineeringGate DielectricsEngineering	2002	58
Junctionless Poly-GeSn Ferroelectric Thin-Film Transistors with Improved Reliability by Interface Engineering for Neuromorphic Computing Chuan-Pu Chou, Yan-Xiao Lin, Yu-Kai Huang, ACS Applied Materials & Interfaces	2019	53

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