High-Performance$hboxSrTiO_3$MIM Capacitors for Analog Applications

Abstract

<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$hboxTaN/hboxSrTiO_3/hboxTaN$</tex> capacitors with a capacitance density of 28–35 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$hboxfF/muhboxm^2$</tex> have been developed by using a high- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$kappa (kappa = hbox147-hbox169) hboxSrTiO_3$</tex> dielectric containing nanometer-sized microcrystals (3–10 nm). A small capacitance effective thickness was achieved by reducing the interfacial TaON using <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$hboxN^+$</tex> treatment on the lower TaN electrode during post-deposition annealing. The small (92 <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$hboxppm/hboxV^2$</tex> ) voltage coefficient of the capacitance and the <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$hbox3times hbox10^-8 hboxA/hboxcm^2$</tex> leakage current at 2 V exceed the International Technology Roadmap for Semiconductors' requirements for analog capacitors at year 2018.