Reduction of fixed charges in atomic layer deposited Al2O3 dielectrics

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.8K citations

Engineering, Band Gap, Semiconductor Device +16

Experimental and theoretical investigation of nano-crystal and nitride-trap memory devices

B. De Salvo, G. Ghibaudo, G. Pananakakis et al. · IEEE Transactions on Electron Devices · 2001 · 144 citations

Memory Operation, Electrical Engineering, Non-volatile Memory +14

Transport mechanisms in atomic-layer-deposited Al2O3 dielectrics

Michael Specht, M. Städele, S. Jakschik et al. · Applied Physics Letters · 2004 · 116 citations

Aluminium Nitride, Engineering, Band Gap +17

80 nm polysilicon gated n-FETs with ultra-thin Al/sub 2/O/sub 3/ gate dielectric for ULSI applications

D. A. Buchanan, E. P. Gusev, E. Cartier et al. · 2002 · 50 citations

Materials Science, Materials Engineering, Electrical Engineering +15

Properties of Al2O3-films deposited on silicon by atomic layer epitaxy

Per Ericsson, Stefan Bengtsson, Jarmo Skarp · Microelectronic Engineering · 1997 · 47 citations

Materials Engineering, Materials Science, Aluminium Nitride +8